Determining the Parameters of Silicon Ions Implanted into Dielectric Layers by Spectroscopic Ellipsometry
V. A. Shvets, V. Yu. Prokopyev, S. I. Chikichev, and N. A. Aulchenko
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia E-mail: shvets@isp.nsc.ru
Pages: 445-452
Abstract
Numerical modeling is performed in order to extract the fluence and energy for the case of dielectric SiO2 layers implanted by Si+ ions from spectroscopic ellipsometry measurements. To this end, one-, two-, and three-layer models are tested. It is found that a two- or three-layer model is sufficient for determining the implantation parameters and dielectric layer thickness with acceptable accuracy. Further complication of the model does not improve the accuracy, but greatly complicates the search procedure for minimization of objective function.
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