Two-Dimensional Strain Distribution in Elastically Anisotropic Heterostructures
A. V. Nenashev1,2, A. A. Koshkarev2, A. V. Dvurechenskii1,2
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrenteva 13, Novosibirsk, 630090 Russia
2Novosibirsk State University, ul. Pirogova 2, Novosibirsk, 630090 Russia
Keywords: heterostructures, quantum wire, elastic deformation, anisotropy
Abstract
We consider the two-dimensional distribution of elastic strain in semiconductor heterostructures — quantum wires characterized by anisotropy of the elastic properties. The deformation is caused by the mismatch in lattice parameters between the material of the quantum wire and its environment (matrix).Such deformations affect the position of the energy bands, so that they should be taken into account in the calculation of the electronic states. It is shown that the strain distribution in an anisotropic medium is a linear combination of two distributions relating to transversely stretched modifications of the original quantum wire.
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