GERMANIUM–BASED METAL–INSULATOR–SEMICONDUCTOR TRANSISTORS AS A WAY OF FURTHER DEVELOPMENT OF CMOS TECHNOLOGY
I. G. Neizvestnyi
Rzhanov Institute of Semiconductor Physics, Siberian Branch Russian Academy of Sciences, prosp. Akademika Lavrent'eva 13, Novosibirsk 630090
Keywords: полевой транзистор, быстродействие, германий, field-effect transistor, performance, germanium
Abstract
The possibility of improving the parameters of semiconductor integrated circuits by replacing the silicon layer in a metal-insulator-semiconductor transistors by a material with higher mobility of charge carriers. It is shown that for the totality of properties, germanium is best suited for this purpose. Recent developments in this area made in different laboratories both in Russia and abroad are discussed.
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