STOCHASTIC SIMULATION OF RECOMBINATION OF ELECTRONS AND HOLES IN TWO-DIMENSIONAL AND THREE-DIMENSIONAL INHOMOGENEOUS SEMICONDUCTORS. PART 1. STOCHASTIC MODEL AND ALGORITHMS
K. K. Sabelfeld, A. E. Kireyeva
Institute of Computational Mathematics and Mathematical Geophysics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, prosp. Akademika Lavrent'eva, 6
Keywords: рекомбинация, полупроводник, диффузия, туннелирование, стохастическое моделирование, клеточный автомат, recombination, semiconductor, diffusion, tunneling, stochastic simulation, cellular automation
Abstract
This paper describes the stochastic models of recombination of electrons and holes in inhomogeneous semiconductors in two-dimensional and three-dimensional cases, which were developed on the basis of discrete (cellular automation) and continuous (Monte Carlo method) approaches. The mathematical model of electron and hole recombination constructed on the basis of a system of spatially inhomogeneous nonlinear integro-differential Smoluchowski equations is described. The continuous algorithm of the Monte Carlo method and the discrete cellular automation algorithm used for the simulation of particle recombination in the semiconductors is described.
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