MOLECULAR BEAM EPITAXY OF BaF2/CaF2 BUFFER LAYERS ON THE Si(100) SUBSTRATE FOR MONOLITHIC PHOTORECEIVERS
N. I. Filimonova, V. A. Ilyushin, A. A. Velichko
Novosibirsk State Technical University, 630073, Novosibirsk, prosp. Karla Marksa, 20
Keywords: молекулярно-лучевая эпитаксия, фторид кальция, фторид бария, кремний, буферный слой, АСМ, морфология поверхности, molecular beam epitaxy, calcium fluoride, barium fluoride, silicon, buffer layer, AFM, surface morphology
Abstract
This paper describes the study of the surface morphology of BaF2 epitaxial films grown by means of molecular beam epitaxy in various growth regimes on a CaF2 Si(100) surface, which is performed by means of atomic force microscopy. The CaF2 layers were obtained on a Si(100) substrate in a low-temperature growth regime (Ts = 500 oC). The technological regimes of growth of BaF2 continuous films with a smooth surface on CaF2/Si(100), suitable as buffer layers for the subsequent growth of PbSnTe layers or other semiconductors, such as A4B6, and solid solutions based on them.
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