BROADBAND SEMICONDUCTOR MIRRORS WITH A SMALL RELAXATION TIME FOR PASSIVE LOCKING OF NEAR IR LASER MODES
N. N. Rubtsova1, G. M. Borisov1,2, V. G. Gol'dort1, A. A. Kovalyov1, D. V. Ledovskikh1, V. V. Preobrazhenskii1, M. A. Putyato1, B. R. Semyagin1
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State University, Novosibirsk, Russia
Keywords: квантовые ямы, полупроводниковые зеркала с насыщением поглощения, пассивная синхронизация мод лазеров, quantum well, semiconductor mirrors with absorption saturation, passive laser mode locking
Abstract
Two types of mirror structures with saturable absorption are under consideration: monolithic mirrors grown from semiconductor materials and mirrors with a dielectric reflector, with quantum well containing semiconductor structures transferred to the dielectric. Both types of mirrors manifest high reflectivity in the near IR range of the spectrum: the "beam table" width is about 100 nm for semiconductor reflectors and more than 200 nm for dielectric reflectors. It is shown that a maximum depth of absorption modulation from 1 to 40 % is possible. The recovery time of the saturating absorber (2 ps) makes these mirrors significantly fit for using in lasers with a pulse repetition frequency of 1 GHz
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