SOS FERROELECTRIC PSEUDO-MOS TRANSISTOR DEGRADATION PROPERTIES AFTER IRRADIATION WITH SWIFT HEAVY IONS Xe AND Bi
V.P. Popov1, V.A. Antonov1, V.A. Volodin1, A.V. Miakonkikh2, K.V. Rudenko2, V.A. Skuratov3
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Valiev Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia
3Joint Institute for Nuclear Research, Dubna, Russia
Keywords: hydrogen transfer, silicon-on-sapphire, hafnium dioxide, interlayer mechanical stresses, ferroelectricity, swift heavy ions
Abstract
The results of changing the parameters of pseudo-MOS-transistors on silicon-on-sapphire mesastructures under irradiation with swift heavy ions (SHI) Xe+26 (150 MeV) and Bi+51 (670 MeV) to a fluence of 2´1011cm-2 are presented. They reveal the accumulation of mechanical stresses and charges in intermediate ferroelectric layers of HfO2 (HO) films 20 nm thick and Hf0.5Zr0.5O2 (HZO) films, laminated with Al2O3 monolayer inserts (HA, HZA) or without them. SOS heterostructures are formed by direct splicing and hydrogen transfer of 500 nm silicon films on HA and HZA nanolayers pre-deposited by plasma-enhanced atomic layer deposition on sapphire. The electrical parameters are determined from the Y-MOSFET drain-gate characteristics ( Ids - Vg ) with 100 nm thick drain-stock W electrodes deposited by magnetron sputtering on the SOS mesastructures through a lithographic mask. A comparison of these characteristics with Raman scattering data shows that the mechanical compression stresses introduced by BTI irradiation in silicon correspond to the volume ratios of Xe and Bi tracks in HA ferroelectric and sapphire.
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