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The room-temperature visible photoluminescence of the In⁺ and As⁺ ion-implanted SiO₂ films is investigated as a function of As⁺ ion energy, annealing temperature, and excitation wavelength. As⁺ ions at the energy of 40, 80, or 135 keV and In⁺ ions at the energy of 50 keV, providing an average range ratio R_p^As/R_p^In of 1, 2 or 3, respectively, are used. The subsequent annealing is carried out at a temperature of 900 and 1100 °C. The photoluminescence spectra are excited with a laser wavelength l_ex = 442 and 473 nm. The photoluminescence peak near 550 nm is obtained at an excitation wavelength of 473 nm. The wavelength position of this peak is shifted to 520-530 nm at l_ex = 442 нм. As the R_p^As/R_p^In ratio increases, the photoluminescence intensity drops down, and the photoluminescence intensity ratio as a function of the annealing temperature is changed. The resultant effect is discussed in the frame of the electron and hole recombination within InAs nanocrystals.