INVESTIGATING THE ELASTIC PROPERTIES OF SUSPENDED CONDUCTING GAAS/ALGAAS NANOSTRUCTURESBY MEANS OF ATOMIC FORCE MICROSCOPY
E. Yu. Zhdanov1,2, A. G. Pogosov1,2, D. A. Pokhabov1,2, M. V. Budantsev1, A. S. Kozhukhov1, A. K. Bakarov1
a:2:{s:4:"TYPE";s:4:"HTML";s:4:"TEXT";s:233:"1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, prosp. Akademika Lavrent’eva, 13
2Novosibirsk State University, 630090, Novosibirsk, Pirogova, 2";}
Keywords: атомно-силовая микроскопия, наноэлектромеханические системы, подвешенные наноструктуры, GaAs/AlGaAs, atomic power macroscopy, nanoelectromechanical systems, suspended nanostructures, GaAs/AlGaAs
Subsection: PHYSICAL AND TECHNICAL PRINCIPLES OF MICRO- AND OPTOELECTRONICS
Abstract
This paper demonstrates the applicability of atomic-power microscopy for studying the elastic properties of suspended semiconductor structures on the basis of relatively thick GaAs/AlGaAs membranes in the case where the stiffness under study significantly exceeds the cantilever stiffness of an atomic-power microscope, which is confirmed by the agreement between the experimentally determined values of both relative and absolute stiffness measured at different structural points and theoretical values.
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