EFFECT OF SUBSTRATE ORIENTATION AND CATALYST DROPLET SIZE ON THE SILICON NANOWIRE GROWTH DIRECTION
S. V. Mantsurova1,2, N. L. Shwartz1,2
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State Technical University, Novosibirsk, Russia
Keywords: silicon, nanowires, simulation, Monte-Carlo
Abstract
The present paper describes the Monte Carlo simulation of the silicon nanowire growth by the vapor-liquid-solid mechanism using gold droplets as a catalyst. The growth of tilted nanowires on Si surfaces with (111), (011) and (100) orientations is considered. It is found that the silicon nanowire orientation and morphology is affected by the size of gold droplets. The growth of tilted nanowires in the ⟨011⟩ and ⟨211⟩ directions using small-size droplets is demonstrated. As the droplet size increases, ⟨111⟩ becomes the most probable direction of nanowire growth. Diagrams demonstrating the influence of the gold droplet size on the probability of the nanowire growth direction on Si surfaces are presented. The kinetics of unstable growth of silicon nanowires catalyzed by small-size droplets is analyzed.
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