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The charge traps formation was studied in SiO₂ films implanted with In⁺ and As⁺ ions during subsequent annealing at temperatures T = 800-1100 °C. It was found, as the annealing temperature increased, the flat band voltage shifted non -monotonous and reached its maximum at the temperature 900 °C. At the same time, the hysteresis observed in the high-frequency C-V-characteristics was minimal. As the annealing temperature grew to 1000-1100 ^oC, the hysteresis window increased by an order of magnitude. From the obtained C-V-characteristics, the density of the fixed charge and the density of rechargeable charge carrier traps in the oxide was estimated. From the C-V and G-V-characteristics as a function of frequency, the surface state density was estimated, which was practically independent of the annealing temperature and was about 2×10¹¹ cm^-2eV^-1. The nature of the fixed charge in the dielectric was related to the oxygen vacancies In-As in the SiO₂ matrix. The increase in the hysteresis of the C-V-characteristics as a function of the annealing temperature was explained by a change in the energy spectrum of deep levels.