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Avtometriya

2007

Number: 4

4131.
FAST IR SPECTROGRAPH (0.5

V. M. Bazovkin, N. A. Valisheva, A. A. Guzev, V. M. Efimov, A. P. Kovchavtsev, G. L. Kuryshev, I. I. Lee, V. G. Polovinkin, and A. S. Stroganov
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia E-mail: PVG@isp.nsc.ru
Pages: 332-336

Abstract >>
A design and parameters of the IR spectrograph based on an MS2004I monochromator-spectrograph and a hybrid microcircuit of a one-dimensional 1



Number: 4

4132.
INFRARED FOCAL PLANE ARRAY TIME DELAY-INTEGRATION READOUT CIRCUIT

I. I. Lee
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia E-mail: irlamlee@isp.nsc.ru
Pages: 337-341

Abstract >>
A time delay-integration (TDI) readout circuit for implementing IR FPA with an arbitrary number of TDI stages is considered.



Number: 4

4133.
SUBMILLIMETER MATRIX PHOTOSENSITIVE DEVICE ON PbSnTe : In FILMS

A. N. Akimov, A. E. Klimov, V. N. Shumsky, and A. L. Aseev
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia E-mail: klimov@thermo.isp.nsc.ru
Pages: 342-350

Abstract >>
Principles of operation of large-scale photodetector arrays for image visualization in a submillimeter spectral range are considered. Parameters of a thermal picture produced on an intermediate screen by a submillimeter component of radiation of an object with a temperature of about 300 K are estimated. Photodetector array parameters required for registration of the intermediate screen radiation are analyzed. The possibility of creating large-scale photodetector arrays on PbSnTe : In films for imaging objects with a room temperature without additional submillimeter illumination is shown.



Number: 4

4134.
320 x 256 SILICON MULTIPLEXERS FOR IR FOCAL PLANE ARRAYS BASED ON MCT DIODES

A. I. Kozlov, I. V. Marchishin, and V. N. Ovsyuk
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia E-mail: kozlov@thermo.isp.nsc.ru
Pages: 351-357

Abstract >>
Principles of designing and functioning the 320



Number: 4

4135.
PECULIARITIES OF ADMITTANCE IN MOS STRUCTURES BASED ON MBE-GROWN MCT LAYERS

A. V. Yartsev
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia E-mail: jartsev@ngs.ru
Pages: 358-362

Abstract >>
Admittance of MOS structures based on Hg1



Number: 4

4136.
REVERSE CURRENT IN p

V. N. Ovsyuk and A. V. Yartsev
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia E-mail: jartsev@ngs.ru
Pages: 363-369

Abstract >>
Results of measuring the current-voltage characteristics of diodes with a control electrode are presented. The diodes are based on graded energy-gap Cd0.22Hg0.78Te (MCT) layers grown by molecular beam epitaxy (MBE) on a semi-insulating GaAs substrate. The diodes are designed for the IR radiation photodetectors with the cutoff wavelength lc = 10 mm. It is shown that the surface currents contribute substantially to the reverse currents of MBE MCT photodiodes during enrichment and depletion. A critical built-in charge density value for which the surface leakage level is under 20% of bulk current is obtained.



Number: 4

4137.
METHOD FOR DETERMINING CRITICAL PRESSURE IN ASSEMBLING HYBRID MCT FOCAL PLANE ARRAYS

V. M. Efimov and D. G. Esaev
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia E-mail: efimov@isp.nsc.ru
Pages: 370-374

Abstract >>
A simple method is proposed for determining the critical pressure that does not destroy CdxHg1



Number: 4

4138.
GROWING HgTe/Cd0.735Hg0.265Te QUANTUM WELLS BY MOLECULAR BEAM EPITAXY

S. A. Dvoretsky1, D. G. Ikusov1, D. Kh. Kvon1, N. N. Mikhailov1, N. Dai2, R. N. Smirnov1, Yu. G. Sidorov1, and V. A. Shvets1
1Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia E-mail: mikhailov@isp.nsc.ru
2Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
Pages: 375-381

Abstract >>
HgTe/Cd0.735Hg0.265 nanostructures with HgTe quantum wells 16.2 and 21.0 nm thick are grown without additional doping on (013)CdTe/ZnTe/GaAs substrates by the method of molecular beam epitaxy. The compositions and thicknesses of the wide-gap layer and quantum well in the course of growth are performed by means of ellipsometry. The accuracy is Dx ≈



Number: 4

4139.
INFRARED FOCAL PLANE ARRAY BASED ON GaAs/AlGaAs QUANTUM-WELL MULTILAYER STRUCTURES

a:2:{s:4:"TEXT";s:273:"D. G. Esaev1, I. V. Marchishin1, V. N. Ovsyuk1, A. P. Savchenko1, V. A. Fateev1, V. V. Shashkin1†, A. V. Sukharev2, A. A. Padalitsa2, I. V. Budkin2, and A. A. Marmalyuk2";s:4:"TYPE";s:4:"html";}
1Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia E-mail: esaev@thermo.isp.nsc.ru
2Polyus Research and Development Institute, Moscow, Russia
Pages: 382-387

Abstract >>
An infrared 320



Number: 5

4140.
Refining the Outer Camera Orientation in Synchronized Shooting from Two Spacecrafts

G. I. Peretyagin and A. Yu. Seren
Institute of Automation and Electrometry, Siberian Branch, Russian Academy of Sciences, Novosibirsk, RussiaE-mail: Seren.Alexey@ngs.ru
Pages: 389-399

Abstract >>
Methods for simultaneous refining the outer orientation parameters of satellite cameras in synchronized shooting from two spacecrafts moving in the same orbit are proposed and investigated. The methods are based on taking into account perspective relations between corresponding coordinates of projections of region elements in a synchronized series of stereograms under assumption that the common aiming point of the cameras does not change during shooting. A method for space shooting simulation is described and used for investigating the dependences of the errors of estimating the orientation angles of the cameras on the number of stereograms and the noise level in projective coordinates of region element images




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