V. M. Bazovkin, N. A. Valisheva, A. A. Guzev, V. M. Efimov, A. P. Kovchavtsev, G. L. Kuryshev, I. I. Lee, V. G. Polovinkin, and A. S. Stroganov
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia E-mail: PVG@isp.nsc.ru
Pages: 332-336
I. I. Lee
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia E-mail: irlamlee@isp.nsc.ru
Pages: 337-341
A. N. Akimov, A. E. Klimov, V. N. Shumsky, and A. L. Aseev
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia E-mail: klimov@thermo.isp.nsc.ru
Pages: 342-350
Principles of operation of large-scale photodetector arrays for image visualization in a submillimeter spectral range are considered. Parameters of a thermal picture produced on an intermediate screen by a submillimeter component of radiation of an object with a temperature of about 300 K are estimated. Photodetector array parameters required for registration of the intermediate screen radiation are analyzed. The possibility of creating large-scale photodetector arrays on PbSnTe : In films for imaging objects with a room temperature without additional submillimeter illumination is shown.
A. I. Kozlov, I. V. Marchishin, and V. N. Ovsyuk
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia E-mail: kozlov@thermo.isp.nsc.ru
Pages: 351-357
A. V. Yartsev
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia E-mail: jartsev@ngs.ru
Pages: 358-362
V. N. Ovsyuk and A. V. Yartsev
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia E-mail: jartsev@ngs.ru
Pages: 363-369
Results of measuring the current-voltage characteristics of diodes with a control electrode are presented. The diodes are based on graded energy-gap Cd0.22Hg0.78Te (MCT) layers grown by molecular beam epitaxy (MBE) on a semi-insulating GaAs substrate. The diodes are designed for the IR radiation photodetectors with the cutoff wavelength lc = 10 mm. It is shown that the surface currents contribute substantially to the reverse currents of MBE MCT photodiodes during enrichment and depletion. A critical built-in charge density value for which the surface leakage level is under 20% of bulk current is obtained.
V. M. Efimov and D. G. Esaev
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia E-mail: efimov@isp.nsc.ru
Pages: 370-374
S. A. Dvoretsky1, D. G. Ikusov1, D. Kh. Kvon1, N. N. Mikhailov1, N. Dai2, R. N. Smirnov1, Yu. G. Sidorov1, and V. A. Shvets1 1Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia E-mail: mikhailov@isp.nsc.ru 2Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
Pages: 375-381
HgTe/Cd0.735Hg0.265 nanostructures with HgTe quantum wells 16.2 and 21.0 nm thick are grown without additional doping on (013)CdTe/ZnTe/GaAs substrates by the method of molecular beam epitaxy. The compositions and thicknesses of the wide-gap layer and quantum well in the course of growth are performed by means of ellipsometry. The accuracy is Dx ≈
a:2:{s:4:"TEXT";s:273:"D. G. Esaev1, I. V. Marchishin1, V. N. Ovsyuk1, A. P. Savchenko1, V. A. Fateev1, V. V. Shashkin1†, A. V. Sukharev2, A. A. Padalitsa2, I. V. Budkin2, and A. A. Marmalyuk2";s:4:"TYPE";s:4:"html";} 1Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia E-mail: esaev@thermo.isp.nsc.ru 2Polyus Research and Development Institute, Moscow, Russia
Pages: 382-387
G. I. Peretyagin and A. Yu. Seren
Institute of Automation and Electrometry, Siberian Branch, Russian Academy of Sciences, Novosibirsk, RussiaE-mail: Seren.Alexey@ngs.ru
Pages: 389-399
Methods for simultaneous refining the outer orientation parameters of satellite cameras in synchronized shooting from two spacecrafts moving in the same orbit are proposed and investigated. The methods are based on taking into account perspective relations between corresponding coordinates of projections of region elements in a synchronized series of stereograms under assumption that the common aiming point of the cameras does not change during shooting. A method for space shooting simulation is described and used for investigating the dependences of the errors of estimating the orientation angles of the cameras on the number of stereograms and the noise level in projective coordinates of region element images