O. V. Naumova, B. I. Fomin, Yu. A. Zhivodkov, E. G. Zaitseva, D. V. Shcheglov, A. V. Latyshev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Keywords: электрооптический модулятор, кремний на изоляторе, волновод, electro-optic modulator, silicon-on-insulator, waveguide
A method for forming p-n-diode based silicon electro-optic modulators using local oxidation is tested. It is shown that the local oxidation of silicon allows forming a waveguide crest shaped as a smoothed trapezoid, in contrast to the classical technique of creating a waveguide crest by plasma-chemical etching. The main advantages of the approach used are described: controllability and reproducibility of critical structural parameters of the modulators (width and height of the waveguide crest), low surface roughness, and the possibility of using approaches to forming a modulating p-n-diode of combined structure in a ridged waveguide, which is standard for planar technologies.
N. N. Rubtsova1, G. M. Borisov1,2, V. G. Gol'dort1, A. A. Kovalyov1, D. V. Ledovskikh1, V. V. Preobrazhenskii1, M. A. Putyato1, B. R. Semyagin1 1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia 2Novosibirsk State University, Novosibirsk, Russia
Keywords: квантовые ямы, полупроводниковые зеркала с насыщением поглощения, пассивная синхронизация мод лазеров, quantum well, semiconductor mirrors with absorption saturation, passive laser mode locking
Two types of mirror structures with saturable absorption are under consideration: monolithic mirrors grown from semiconductor materials and mirrors with a dielectric reflector, with quantum well containing semiconductor structures transferred to the dielectric. Both types of mirrors manifest high reflectivity in the near IR range of the spectrum: the "beam table" width is about 100 nm for semiconductor reflectors and more than 200 nm for dielectric reflectors. It is shown that a maximum depth of absorption modulation from 1 to 40 % is possible. The recovery time of the saturating absorber (2 ps) makes these mirrors significantly fit for using in lasers with a pulse repetition frequency of 1 GHz
M. F. Stupak1,2, N. N. Mikailov2,3, S. A. Droteskii3,4, M. V. Yakushev3 1Design and Engineering Institute of Scientific Instrumentation, Siberian Branch, Russian Academy of Sciences, Novosibirsk, ul. Russkaya, 41 2Novosibirsk State University, Novosibirsk, ul. Pirogova, 2 3Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, prosp. Akademika Lavrentyeva, 13 4Tomsk State University, Tomsk, prosp. Lenina, 36
Keywords: кристаллы класса ¯43m, вторая гармоника, азимутальные угловые зависимости, подложки GaAs, структуры CdxHg1-xTe, 43m class crystals, second harmonic, azimuthal angular dependences, GaAs substrates, CdHgTe structures
This paper presents the results of numerical simulation for 43m class crystals and experimental results for azimuthal angular dependences of polarization components of a signal of a second-harmonic reflected from GaAs substrates with (013) orientation, CdTe/ZnTe/GaAs buffer layers, and CdxHg1-xTe/CdTe/ZnTe/GaAs structures, sequentially grown on these substrates with normal incidence of laser radiation on the sample and azimuthal rotation of its polarization plane. It is revealed from investigating the (013)GaAs substrates and CdTe/ZnTe/GaAs buffer layers that deviations from the base cut (013) relative to angles turn out to be 1-3 in the GaAs substrates and up to 8 in the CdTe/ZnTe/GaAs buffer layers. The observed asymmetry of the minima of angular experimental dependences of the second-harmonic signal in the GaAs substrates is related to stresses. It is assumed on the basis of the experimental data that the tensor components of nonlinear susceptibility of the crystalline structure CdxHg1-xTe significantly exceed similar tensor components in CdTe and GaAs in value
O. A. Tkachenko1, D. G. Baksheev2,3, V. A. Tkachenko1,2,4, Z. D. Kwon1,2, A. S. Yaroshevich1, E. E. Rodyakina1,2, A. V. Latyshev1,2 1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, prosp. Akad. Lavrent'eva 13, Novosibirsk, 630090 2Novosibirsk State University, ul. Pirogova 2, Novosibirsk, 630090 3Yandex company, ul. L. Tolstogo 16, Moscow, 119021 4Novosibirsk State Technical University, prosp. K. Marksa 20, Novosibirsk, 630073
Keywords: одномерный барьер, динамический потенциал, нестационарное уравнение Шрёдингера, туннельный точечный контакт, двумерный электронный газ, one-dimensional barrier, dynamic potential, nonstationary Schrodinger equation, tunnel point contact, two-dimensional electron gas
The theory of coherent photon-stimulated electron tunneling through a one-dimensional smooth barrier was successfully used to model the results of measuring the terahertz photoconductivity of a tunnel point contact in a two-dimensional electron gas. For this barrier in a deeper tunnel mode, photon steps in the dependence of the tunneling coefficient on the initial electron energy were found. Their position is determined by the energy of the terahertz photon
E. F. Pen1,2, V. V. Shelkovnikov3 1Institute of Automation and Electrometry, Siberian Branch, Russian Academy of Sciences, pr. Akademika Koptyuga 1, Novosibirsk, 630090 Russia 2Novosibirsk State Technical University, pr. Karla Marksa 20, Novosibirsk, 630073 Russia 3Vorozhtsov Institute of Organic Chemistry, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent'eva 9, Novosibirsk, 630090 Russia
Keywords: голография, регистрирующие среды, фотополимерные материалы, отражательные голограммы, дифракционная эффективность, holography, recording media, photopolymer materials, reflection holograms, diffraction efficiency
The relationship of the diffraction efficiencies of volume reflection holograms obtained with the use of double-beam and single-beam recording schemes in absorbing light-sensitive materials is studied theoretically and experimentally. This relationship is demonstrated by an example of a particular photopolymer material.
I. A. Derebezov, A. V. Gaisler, V. A. Gaisler, D. V. Dmitriev, A. I. Toropov, A. C. Kozhukhov, D. V. Shcheglov, A. V. Latyshev, A. L. Aseev
Rzhanov Sobolev Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, prosp. Akademika Lavrent'eva 13, Novosibirsk, 630090
Keywords: полупроводниковые квантовые точки, экситон, биэкситон, тонкая структура экситонных состояний, субпуассоновская статистика, излучатели одиночных фотонов, излучатели фотонных пар, запутанных по поляризации, semiconductor quantum dots, exciton, biexciton, thin structure of exciton states, sub-Poisson statistics, single photon emitters, polarization-entangled photon pair emitters
Subsection: PHYSICAL AND TECHNICAL PRINCIPLES OF MICRO- AND OPTOELECTRONICS
A system of quantum dots based on Al x In1- x As/Al y Ga1- y As solid solutions is investigated. Application of Al x In1- x As wide-gap solid solutions as the basis of quantum dots substantially expands the spectral range of the radiation to the short-wavelength region, including the wavelength region near ~770 nm, which is of interest for the development of aerospace systems of quantum cryptography. The optical characteristics of Al x In1- x As single quantum dots grown by the Stranski-Krastanov mechanism were studied by cryogenic microphotoluminescence. The statistics of radiation of the exciton states of single quantum dots was studied using a Hanbury Brown-Twiss interferometer. The function of paired photon correlations clearly shows the sub-Poissonian character of the radiation statistics, which directly confirms the possibility of developing single-photon emitters based on Al x In1- x As quantum dots. The fine structure of the exciton states of quantum dots was investigated in the wavelength region near ~770 nm. The magnitude of splitting of exciton states is found to be comparable with the natural width of exciton lines, which is of great interest for the development of emitters of pairs of entangled photons based on Al x In1- x As quantum dots.
S. S. Abdurakipov1,2, O. A. Gobyzov1,2, M. P. Tokarev1,2, V. M. Dulin1,2
a:2:{s:4:"TEXT";s:227:"1Kutateladze Institute of Thermophysics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, prosp. Akademika Lavrent’eva, 1 2Novosibirsk State University, 630090, Novosibirsk, Pirogova 2";s:4:"TYPE";s:4:"html";}
Keywords: классификация изображений, мониторинг, машинное обучение, свёрточная нейронная сеть, факел, image classification, monitoring, computer training, convolutional neural network, flame
Subsection: MODELING IN PHYSICAL AND TECHNICAL RESEARCH
A method for automatic determination of combustion regimes using flame images on the basis of the tagged data of a trained convolutional neural network is under consideration. It is shown that the accuracy of regime classification reaches 98 % on the flame images of a gas burner. The results of the operation of the convolutional neural network and classification using different linear models are compared.
I. A. Hodashinsky, I. V. Filimonenko, K. S. Sarin
Tomsk State University of Control Systems and Radioelectronics, prosp. Lenina 40, Tomsk, 634050
Keywords: инициализация, нечёткие системы, метаэвристические алгоритмы, аппроксимация, initialization, fuzzy systems, metaheuristic algorithms, approximation
Subsection: AUTOMATION SYSTEMS IN SCIENTIFIC RESEARCH AND INDUSTRY
A method for designing Takagi-Sugeno fuzzy systems is proposed in which the structure of the systems is generated using a piecewise linear initialization algorithm, and parameters are optimized using a meta-heuristic algorithm. The obtained systems are tested against real data sets. The influence of some parameters of this algorithm on the approximation accuracy are analyzed. Estimates of the approximation accuracy and the number of fuzzy rules are compared with four known methods of design
A. Zh. Abdenov, G. A. Abdenova
L. N. Gumilyov Eurasian National University, ul. K. Satpayev 2 Astana, 010008, Republic of Kazakhstan
Keywords: уравнение теплопроводности, модель в пространстве состояний, метод конечных разностей, пассивная идентификация коэффициентов, фильтр Калмана, вейвлет-преобразование, heat equation, state-space model, finite-difference method, passive identification of coefficients, Kalman filter, wavelet transform
Pages: 141-147 Subsection: ANALYSIS AND SYNTHESIS OF SIGNALS AND IMAGES
This paper describes the problem of passive identification of heat equation coefficients with account for the noise of the behavior of the object dynamics model and for the noise of the measuring system model. The use of the finite difference method allowed for reducing the solution of partial differential equations to the solution of a system of linear finite-difference and algebraic equations described by models in the form of a state space. Presentation of the heat equation in form of such a model makes it possible to apply the Kalman filter algorithm for the reliable estimation of the behavior of the object under study.
N. G. Mironnikov1,2, V. P. Korolkov1,2, D. I. Derevyanko3, V. V. Shelkovnikov3,4, O. B. Vitrick5,6, A. Yu. Zhizhchenko5
a:2:{s:4:"TEXT";s:724:"1Institute of Automation and Electrometry, Siberian Branch, Russian Academy of Sciences, pr. Akademika Koptyuga 1, Novosibirsk, 630090 Russia 2Novosibirsk State University, ul. Pirogova 2, Novosibirsk, 630090 3N. N. Vorozhtsov Novosibirsk Institute of Organic Chemistry, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 9, Novosibirsk, 630090 Russia 4Tomsk State University, ul. Lenina 36, Tomsk, 634050 Russia 5Institute of Automation and Control Processes, Far-East Branch, Russian Academy of Sciences, ul. Radio 5, Vladivostok, sl690041 Russia 6Far-East Federal University, ul. Sukhanova 8, Vladivostok, 690041 Russia";s:4:"TYPE";s:4:"html";}
Keywords: гибридный фотополимер, тиол-силоксан-акрилатные олигомеры, коэффициент преломления, термооптический коэффициент, коэффициент теплового расширения, атермализация, hybrid photopolymer, thiol-siloxane and tetraacrylate oligomers, refractive index, thermooptic coefficient, thermal expansion coefficient, athermalization
Pages: 180-186
Optical (refractive index and absorption coefficient) and thermo-optical (linear thermal expansion and thermo-optic coefficients) characteristics of a new hybrid organic-inorganic photopolymer material "Hybrimer-TATS" based on thiol-siloxane and tetraacrylate oligomers are studied. Variation of the ratio of initial components makes it possible to change the thermo-optic coefficient from -0.7 x 10-4 to 0,66 x 10-4 K-1, which offers prospects for synthesizing athermal optical components and optical elements with a high sensitivity to temperature variation for thermal sensors.